The STGAP2HD for IGBTs and STGAP2SICD for SiC MOSFETs leverage ST’s latest galvanic isolation technology to provide 6 kV transient voltage capability in an SO-36W wide-body package.In addition, ±100 V/ns dv/dt transient immunity prevents spurious turn-on in electrically noisy operating conditions. The devices can deliver a powerful gate-control signal of up to 4 A, with dual output pins for extra flexibility in gate driving allowing for independent adjustment of turn-on and turn-off times. The active Miller clamp prevents gate spikes during fast commutation in half-bridge topologies.
XP Power促进HV提供德国收购 VEPAC电子电源电子/电源管理 XP Power是世界领先的开发商和电子行业批判性能解决方案的制造商之一,已收购了德国公司Fug Elektronik GmbH(Fug)和Guth高压
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